基本信息
文件名称：AGMsemi-AGM425ME VER2.72宏盛微半导体26.pdf
文件大小：1.32 MB
总页数：11 页
更新时间：2025-06-27
总字数：约3.43万字
文档摘要
AGM425ME
●GeneralDescription
TheAGM425MEcombinesadvancedtrenchMOSFETProductSummary
technologywithalowresistancepackagetoprovide
extremelylowRDS(N)
OBVDSSRDSONID
Thisdeviceisidealforloadswitchandbatteryprotection
40V25mΩ6A
.6
applications.
●Features-45Ω
0V65m.-3.3A
■AdvancehighcelldensityTrenchtechnology
Oi
ST23-6LPinConfiguraont
LowRtominimizc
■DS(ON)eonductiveloss
■LowGateChargeforfastswitching
■LowThermalresistance
■100%Avalanchetested
■10%DDS
0Vtested
●iction
Appla
/VAVcore
■MBG
■SMnd
PS2Synchronus
oRectifier
■POapli
Lpcation
■BLDCrdiver
Motor
a
Pckark
geMaingaO
ndrderingIma
nfortion
e
Dvc
ieMarkigDeviceDev
nicea
PckageReelSizeTapewiQuati