基本信息
文件名称：AGMsemi-AGM425M VER2.66宏盛微半导体46.pdf
文件大小：1.6 MB
总页数：11 页
更新时间：2025-06-27
总字数：约5万字
文档摘要
AGM425M
●GeneralDescription
ProductSummary
TheAGM425Mcombinesadvancedtrench
MOSFETtechnologywithalowresistancepackage
toprovideextremelylowRDS(ON).BVDSSRDSONID
Thisdeviceisidealforloadswitchandbattery
40V18mΩ6.6A
protectionapplications.
●Features-40V50mΩ-5.5A
■AdvancehighcelldensityTrenchtechnology
SO8
PPinCngurion
ofiatt
■LowRDS(ON)tominimizeconductiveloss
■LowGateChargeforfastswitching
■LowThermalresistance
■100%Avalanchetested
■100%DVDStested
●Application
■ElectronicBallast
■ElectronicTransformer
■SwitchModePowerSupply
aeMarkingand
PackgOrderingInformaon
ti
eRee
Dvael
iceMarkineicePackgSizeTa
gDviceDevpewidhtQuantity
2
AGAM425MSOP8330mm1mm
M425MG