基本信息
文件名称：AGMsemi-AGM314MD VER2.82宏盛微半导体18.pdf
文件大小：1.56 MB
总页数：10 页
更新时间：2025-06-27
总字数：约2.74万字
文档摘要
AGM314MD
●GeneralDescription
ProductSummary
TheAGM314MDcombinesadvancedtrench
MOSFETtechnologywithalowresistance
packagetoprovideextremelylowRDS(ON).BVDSSRDSONID
Thisdeviceisidealforloadswitchandbattery30V10mΩ30A
protectionapplications.-30V21mΩ-20A
●Features
■AdvancehighcelldensityTrenchtechnologyTO-22
5-4LPinConfiguration
■LowRDS(ON)tominimizeconductiveloss
■LowGateChargeforfastswitching
■LowThermalresistance
■100%Avalanchetested
■100%DVDStested
●Application
■MB/VGAVcore
nd
■SMPS2SynchronousRectifier
■POLapplication
■BLDCMotordriver
PackageMarkig
nad
nOrderingInformatni
o
vicee
DerkiDv
MangiceDevicePackaean
gRelSpwtQu
eeizeTaidhtity
AGM314MDAGM314MDTO-252-4L330mm16mm2500
Table1.AbsoluteMaximumRatiT
ngs(A25℃)
Raintg
Symbol