基本信息
文件名称：AGMsemi-AGM418M VER2.66宏盛微半导体59.pdf
文件大小：1.01 MB
总页数：8 页
更新时间：2025-06-27
总字数：约3.1万字
文档摘要
AGM418M
●GeneralDescription
TheAGM418Mcombinesadvancedtrench
ProductSummary
MOSFETtechnologywithalowresistance
packagetoprovideextremelylowRDS(ON).
BVDSSRDSONID
Thisdeviceisidealforloadswitchandbattery
40V18mΩ8A
protectionapplications.
●FeaturesSOP8PinConfguriation
■AdvancehighcelldensityTrenchtechnology
■LowRDS(ON)tominimizeconductiveloss
■LowGateChargeforfastswitching
■LowThermalresistance
■100%Avalanchetested
■100%DVDStested
●Application
■MB/VGAVcore
nd
■SMPS2SynchronousRectifier
■POLapplication
■BLDCMotordriver
n
PackageMarkingandOrderingIformation
DeviceMakin
rgDeviceDevicPac
ekge
aReelSizeTapewidthQuantity
AGM418MAGM418MSOP8330mm12mm3000
Table1.AbsoluteMaximumRatings(TA25℃)
mterngs
SymbolParaeRatiUnit
Dran-iSourceVoltageV0(V）V
VDSGS40