基本信息
文件名称：AGMsemi-AGM412MA VER2.65宏盛微半导体93.pdf
文件大小：1.06 MB
总页数：7 页
更新时间：2025-06-27
总字数：约2.73万字
文档摘要
AGM412MA
●GeneralDescription
Prdu
octSummary
TheAGM412MAcombinesadvancedtrench
MOSFETtechnologywithalowresistancepackage
toprovideextremelylowRDS(ON).
ThisdeviceisidealswitchandbatteryBVSSRDSONID
forloadD
protectionapplications.
Vm
●Features4010Ω30A
■AdvancehighcelldensityTrenchtechnology
PDFN5*6Pinfig
Conuration
■LowRDS(ON)tominimizeconductiveloss
■LowGateChargeforfastswitching
■LowThermalresistance
■100%Avalanchetested
■100%DVDStested
●Application
■ElectronicBallast
■ElectronicTransformer
■SwitchModePowerSupply
O
agdrd
PaMarkinaneringIn
ckgefr
omation
DecDeQuanttiy
vieMarkiviceDeicReSTa
ngvePaelizee
ckagepwidth
AGM412MAAGM412MA5330mm12mm