AGM418MNA
●GeneralDescription
TheAGM418MNAcombinesadvancedtrenchProductSummary
MOSFETtechnologywithalowresistance
packagetoprovideextremelylowRDS(ON).DSSN
BVSRDOID
Thisdeviceisidealforloadswitchandbattery
40V17mΩ22A
protectionapplications.
●FeaturesPDFN5*6PinConfiguration
■AdvancehighcelldensityTrenchtechnology
■LowRDS(ON)tominimizeconductiveloss
■LowGateChargeforfastswitching
■LowThermalresistance
■100%Avalanchetested
■100%DVDStested
●Application
■MB/VGAVcore
nd
■SMPS2SynchronousRectifier
■POLapplication
■BLDCMotordriver
rkinganOrderigI
eMadnnformatin
ckgo
Paa
DeviceMarkingDeviceDevicPReelSizeTapewidthQuantity
eackage
AGM418MNAAGM418MNAPDFN5*6330mm12mm3000
Table1.AbsoluteMaximumRatings(TA25℃)
mterngs
SymbolParaeRatiUnit
VDSDrain-SourceVoltage(VGS0V）40V
Gate-Sur
VGSoceVoltage(VDS0V)±20V