基本信息
文件名称：AGMsemi-AGM412MNA VER2.66宏盛微半导体99.pdf
文件大小：1.15 MB
总页数：7 页
更新时间：2025-06-27
总字数：约2.69万字
文档摘要
AGM412MNA
●GeneralDescription
Prdu
octSma
TheAGM412MNAcombinesadvancedtrenchumry
MOSFETtechnologywithalowresistancepackage
toprovideextremelylowRDS(ON).
ThisdeviceisidealforloadswitchandbatteryBVRDONID
DSSS
protectionapplications.
●Features40V10mΩ30A
■AdvancehighcelldensityTrenchtechnology
PDFN5*6PinConfiguration
■LowRDS(ON)tominimizeconductiveloss
■LowGateChargeforfastswitching
■LowThermalresistance
■100%Avalanchetested
■100%DVDStested
●Application
■MB/VGAVcore
nd
■SMPS2SynchronousRectifier
■POLapplication
■BLDCMotordriver
drderngIinformaiton
ekniganO
PkagMar
ac
DeviceMakDeDeQuantity
ringvicevicePackageReelSizeTapeidt
wh
M4MNAAGM412MNA
AG12PDFN5*6330mm12mm3000
Table1.AbsoulteMaximumRatings(TA25℃)
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