基本信息
文件名称：AGMsemi-AGM407MNA VER2.66 (1)宏盛微半导体94.pdf
文件大小：1.21 MB
总页数：8 页
更新时间：2025-06-27
总字数：约2.9万字
文档摘要
AGM407MNA
●GeneralDescription
TheAGM407MNAcombinesadvancedtrenchMOSFETProductSummary
to
technologywithalowresistancepackageprovide
extremelylowRDS(ON).DSSSO
BVRDNID
Thisdeviceisidealforloadswitchandbatteryprotection40V5.6mΩ50A
applications.
PDFN5*6PinConfiguration
●Features
■AdvancehighcelldensityTrenchtechnology
■LowRDS(ON)tominimizeconductiveloss
■LowGateChargeforfastswitching
■LowThermalresistance
■100%Avalanchetested
■100%DVDStested
●Application
■MB/VGAVcore
nd
■SMPS2SynchronousRectifier
■POLapplication
■BLDCMotordriver
Pc
akaga
eMrkingandOrderingInformatoni
akingzedthQuantity
eiceMreviceReelSiTapewi
DvDDevicePaa
ckge
G407MNANA
AMAGM407MPDFN5*6330mm12mm3000
Table1.Absu
olteMaximumRatings(TA25℃)
SymbolParameterValueUnit
VDSorcetage(VGS0
inuVolV）
Dra-S40V