人
IGBTDiscrete
VcE1200
名下
C四VcESADIc=S0A1.SS
G
Applications
Circuit.FrequencyConverters
.ACandDCservodriveamplifier
C.Uninterruptiblepowersupply
Features
，Highbreakdownvoltageto1200Vforimproved
reliability
G-Maximumjunctiontemperature175C
Positivetemperaturecoefficient
E。Includingfastsoftrecoveryanti-parallelFWD
.Highshortcircuitcapability(10us)
MaximumRatings
ParameterSymbolValue人名
Collector-EmitterBreakdownVoltage人1200
DCCollectorCurrentblimitedbyTinax
Tc=25扎Te80人
[喜人50
DiodeForwardCurrent,limitedbyTimax
Tec=25气二80A
[名人50
ContinuousGate-EmitterVoltasgeVGE士20
TransientGate-EmitterVoltage了”4了30
(pp委10hs,D0.010)
TurmoffSafeOperatingAreaVcE1200V，100
TK150C
PulsedCollectorCurrentVarp=15V，
tplimitedbyThaax二100人
DiodePulsedCurrenttplimitedbyTimaxJIFpuk100A
ShortCircuitWithstandTime，
Tse10hs
VE=1$V,Vcc=600V，VcEM委1200V
PowerDissipation,Tj=175S，Tc=25S民Peer468W
S-M529D
Rev.1.1,1-Sep-24
IAADGWSON120CTLIA靖,
OperatingJunctionTemperature再-40...+175
StorageTemperatureTs-35...+150
SolderingTemperature，wavesoldering1.6mml260
(0.063in.)fromcasefor10s
ElectricalCharacteristicsoftheIGCBT(TF