AP50N06D
60VN-ChannelEnhancementModeMOSFET
Description
TheAP50N06Dusesadvancedtrenchtechnology
toprovideexcellentRDS(ON),lowgatechargeand
operationwithgatevoltagesaslowas4.5V.This
deviceissuitableforuseasaBatteryprotection
orinotherSwitchingapplication.
GeneralFeatures
V=60VI58A
DSD
RDS(ON)16mΩ@VGS=10V（Type:11mΩ）
Application
Batteryprotection
Loadswitch
Uninterruptiblepowersupply
PackageMarkingandOrderingInformation
ProductIDPackMarkingQty(PCS)
AP50N06DTO-252-3AP50N06DXXXXYYYY2500
AbsoluteMaximumRatings(T=25℃unlessotherwisenoted)
C
SymbolParameterRatingUnits
VDSDrain-SourceVoltage60V
VGSGate-SourceVoltage±20V
I@T=25℃ContinuousDrainCurrent,VGS@10V158A
DC
I@T=100℃ContinuousDrainCurrent,VGS@10V130A
DC
IDMPulsedDrainCurrent290A
EASSinglePulseAvalancheEnergy339.2mJ
IASAvalancheCurrent