AP200N05NF
45VN-ChannelEnhancementModeMOSFET
Description
TheAP200N05NFusesadvancedAPM-SGTVtechnology
toprovideexcellentRDS(ON),lowgatechargeand
operationwithgatevoltagesaslowas4.5V.This
deviceissuitableforuseasaBatteryprotection
orinotherSwitchingapplication.
GeneralFeatures
V=45VI=200A
DSD
RDS(ON)1.3mΩ@VGS=10V（Type：0.95mΩ）
Application
BMS
BLDC
UPS
PackageMarkingandOrderingInformation
ProductIDPackMarkingQty(PCS)
AP200N05NFPDFN5*6-8LAP200N05NFXXXYYYY5000
AbsoluteMaximumRatings(T=25℃unlessotherwisenoted)
C
SymbolParameterMax.Units
VDSSDrain-SourceVoltage45V
VGSSGate-SourceVoltage±20V
ID@TC=25℃ContinuousDrainCurrent,VGS@10V1200A
ID@TC=100℃ContinuousDrainCurrent,VGS@10V1125A
IDMPulsedDrainCurrent750A
EASSinglePulsedAvalancheEnergy420mJ
IASAvalancheCurrent70A
PD@TC=25℃PowerDissipation68