AP180N04NF
40VN-ChannelEnhancementModeMOSFET
Description
TheAP180N04NFusesadvancedAPM-SGTVtechnology
toprovideexcellentRDS(ON),lowgatechargeand
operationwithgatevoltagesaslowas4.5V.This
deviceissuitableforuseasaBatteryprotection
orinotherSwitchingapplication.
GeneralFeatures
V=40VI180A
DSD
RDS(ON)1.5mΩ@VGS=10V（Type：1.15mΩ）
Application
BMS
BLDC
UPS
PackageMarkingandOrderingInformation
ProductIDPackMarkingQty(PCS)
AP180N04NFPDFN5*6-8LAP180N04NFXXXYYYY5000
AbsoluteMaximumRatings(T=25℃unlessotherwisenoted)
C
SymbolParameterMax.Units
VDSSDrain-SourceVoltage40V
VGSSGate-SourceVoltage±20V
ID@TC=25℃ContinuousDrainCurrent,VGS@10V1180A
ID@TC=100℃ContinuousDrainCurrent,VGS@10V1125A
IDMPulsedDrainCurrent750A
EASSinglePulsedAvalancheEnergy420mJ
IASAvalancheCurrent70A
PD@TC=25℃PowerDissipation