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AP150N04PIT

40VN-ChannelEnhancementModeMOSFET

Description

TheAP150N04P/Tusesadvancedtrenchtechnology

toprovideexcellentRDS(ON),lowgatechargeand

operationwithgatevoltagesaslowas4.5V.This

deviceissuitableforuseasaBatteryprotection

orinotherSwitchingapplication.

GeneralFeatures

V=40VI150A

DSD

RDS(ON)2.9mΩ@VGS=10V(Type：2.4mΩ)

Application

Batteryprotection

Loadswitch

Uninterruptiblepowersupply

PackageMarkingandOrderingInformation

ProductIDPackMarkingQty(PCS)

AP150N04PTO-220-3LAP150N04PXXXYYYY1000

AP150N04TTO-263-3LAP150N04TXXXYYYY800

AbsoluteMaximumRatings(T=25℃unlessotherwisenoted)

C

SymbolParameterRatingUnits

VDSDrain-SourceVoltage40V

VGSGate-SourceVoltage±20V

1

I@T=25℃ContinuousDrainCurrent,V@10V150A

DCGS

I@T=100℃1

DCContinuousDrainCurrent,VGS@10V