基本信息
文件名称：宏盛微半导体AP100N04D.pdf
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文档摘要

AP100N04D

40VN-ChannelEnhancementModeMOSFET

Description

TheAP100N04Dusesadvancedtrenchtechnology

toprovideexcellentRDS(ON),lowgatechargeand

operationwithgatevoltagesaslowas4.5V.This

deviceissuitableforuseasaBatteryprotection

orinotherSwitchingapplication.

GeneralFeatures

VDS40VID100A

RDS(ON)5.5mΩ@VGS=10V(Type：4.2mΩ)

Application

Batteryprotection

Loadswitch

Uninterruptiblepowersupply

PackageMarkingandOrderingInformation

ProductIDPackMarkingQty(PCS)

AP100N04DTO-252-3LAP100N04DXXXYYYY5000

AbsoluteMaximumRatings(T=25℃unlessotherwisenoted)

C

SymbolParameterRatingUnits

VDSDrain-SourceVoltage40V

VGSGate-SourceVoltage±20V

1

I@T=25℃ContinuousDrainCurrent,VGS@10V100A

DC

1

I@T=100℃ContinuousDrainCurrent,VGS@10V58A

DC

2

IDMP