基本信息
文件名称：宏盛微半导体AP80N06NF.pdf
文件大小：1.49 MB
总页数：7 页
更新时间：2025-03-20
总字数：约1.82万字
文档摘要
AP80N06NF
60VN-ChannelEnhancementModeMOSFET
Description
TheAP80N06NFusesadvancedtrenchtechnology
toprovideexcellentRDS(ON),lowgatechargeand
operationwithgatevoltagesaslowas4.5V.This
deviceissuitableforuseasaBatteryprotection
orinotherSwitchingapplication.
GeneralFeatures
V=60VI80A
DSD
RDS(ON)6.0mΩ@VGS=10V（Type：4.5mΩ）
Application
Batteryprotection
Loadswitch
Uninterruptiblepowersupply
PackageMarkingandOrderingInformation
ProductIDPackMarkingQty(PCS)
AP80N06NFPDN5*6-8LAP80N06NFXXXYYYY5000PCS
o
AbsoluteMaximumRatings@T=25C(unlessotherwisespecified)
j
SymbolParameterValueUnit
VDSDrainsourcevoltage60V
VGSGatesourcevoltage±20V
I@T=25℃Continuousdraincurrent1)80A
DC
I@T=100℃Continuousdraincurrent1)45A
DC
IDMPulseddraincurrent2)210A
IASDiodeforwardcurrent