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AP80N04PIT

40VN-ChannelEnhancementModeMOSFET

Description

TheAP80N04P/Tusesadvancedtrenchtechnology

toprovideexcellentRDS(ON),lowgatechargeand

operationwithgatevoltagesaslowas4.5V.This

deviceissuitableforuseasaBatteryprotection

orinotherSwitchingapplication.

GeneralFeatures

V=40VI80A

DSD

RDS(ON)7mΩ@VGS=10V(Type：5.5mΩ)

Application

Batteryprotection

Loadswitch

Uninterruptiblepowersupply

PackageMarkingandOrderingInformation

ProductIDPackMarkingQty(PCS)

AP80N04PTO-220-3LAP80N04PXXXYYYY1000

AP80N04TTO-263-3LAP80N04TXXXYYYY800

AbsoluteMaximumRatings(T=25℃unlessotherwisenoted)

C

SymbolParameterRatingUnits

VDSDrain-SourceVoltage40V

VGSGate-SourceVoltage±20V

1

I@T=25℃ContinuousDrainCurrent,V@10V80A

DCGS

I@T=100℃1

DCContinuousDrainCurrent,VGS@10V