靖芯JXP22P10G
STBCHIP100VP-ChannelEnhancementModeMOSFET
DESCRIPTIONSCHEMATICDIAGRAM
JXP22P10GusesadvancedpowertrenchS
technologythathasbeenespeciallytailoredto
minimizetheon-stateresistanceandyetmaintain
superiorswitchingperformance.
G
GENERALFEATURES
?ID=-22A,VDS=-100V
D
?RDS(ON)(Typ.)=55m?@VGS=-10V
?RDS(ON)(Typ.)=60m?@VGS=-4.5V
PINASSIGNMENT
?GreenDeviceAvailable
?LowGateCharge
?AdvancedHighCellDensityTrenchTechnology
?100%EASGuaranteed
APPLICATION
?PowerManagementSwitches
?DC/DCConverters
PACKAGE
?TO-252Note：XXYY—DateCode
ORDERINGINFORMATION
PartNumberStorageTemperaturePackageMarkingDevicesPerReel
JXP22P10G-55°Cto+150°CTO-252JXP22P10/XXYY2500
ABSOLUTEMAXIMUMRATINGS
(T=25℃unlessotherwisenoted)
A
ParameterSymbolLimitUnit
Drain-sourcevoltageVDS-100V
Gate-sourcevoltageVGS±20V
T=25°C-22
A
Continuousdraincurrent(T=150°C)aI
JD