JXP12P06G

60VP-ChannelEnhancementModeMOSFET

DESCRIPTIONSCHEMATICDIAGRAM

TheJXP12P06Gusesadvancedtrench

technologytoprovideexcellentRDS(ON),lowgate

chargeandhighdensitycellDesignforultralow

on-resistance.Thisdeviceissuitableforuseasa

loadswitchorinPWMapplications.

GENERALFEATURES

?V-60V，I-12A

DSD

RDS(ON)(Typ.)90m?@VGS-4.5V

PINASSIGNMENT

RDS(ON)(Typ.)75m?@VGS-10V

?HighpowerandcurrenthandingcapabilityTO-252-2L

?Leadfreeproductisacquired(TopView)

?Surfacemountpackage

APPLICATION

?PWMapplications

?Loadswitch

PACKAGE

?TO-252-2LNote：XX：YearCode;YY：WeekCode.

ORDERINGINFORMATION

PartNumberStorageTemperaturePackageMarkingDevicesPerReel

JXP12P06G-55°Cto+150°CTO-252-2L12P06/XXYY3000

ABSOLUTEMAXIMUMRATINGS

(TA25℃unlessotherwisenoted)

ParameterSymbolLimitUnit

Drain-sourcevoltageVDS-60V

Gate-sourcevoltageVGS±20V

T25°C-12

C

Continuousdraincurrent(T150°C)aI

JD

T70°C-9.6