AP300N05TLG5
45VN-ChannelEnhancementModeMOSFET
Description
TheAP300N05TLG5usesadvancedAPM-SGTVtechnology
toprovideexcellentRDS(ON),lowgatechargeand
operationwithgatevoltagesaslowas4.5V.This
deviceissuitableforuseasaBatteryprotection
orinotherSwitchingapplication.
GeneralFeatures
V=45VI=300A
DSD
RDS(ON)1.3mΩ@VGS=10V（Type：1.0mΩ）
Application
BMS
BLDC
UPS
PackageMarkingandOrderingInformation
ProductIDPackMarkingQty(PCS)
AP300N05TLG5TOLLA-8LAP300N05TLG5XXXYYYY2000
AbsoluteMaximumRatings(T=25℃unlessotherwisenoted)
C
SymbolParameterMax.Units
VDSSDrain-SourceVoltage45V
VGSSGate-SourceVoltage±20V
ID@TC=25℃ContinuousDrainCurrent,VGS@10V1300A
ID@TC=100℃ContinuousDrainCurrent,VGS@10V1210A
IDMPulsedDrainCurrent900A
EASSinglePulsedAvalancheEnergy510mJ
IASAvalancheCurrent70A
PD@TC=25℃PowerDissipation230