AP280N08MP
85VN-ChannelEnhancementModeMOSFET
Description
TheAP280N08MPusesadvancedtrenchtechnology
toprovideexcellentRDS(ON),lowgatechargeand
operationwithgatevoltagesaslowas10V.
ThisdeviceissuitableforuseasaBatteryprotection
orinotherSwitchingapplication.
GeneralFeatures
V=85VI280A
DSD
RDS(ON)2.8mΩVGS10V（Type：2.1mΩ）
Application
Batteryprotection
Loadswitch
Uninterruptiblepowersupply
PackageMarkingandOrderingInformation
ProductIDPackMarkingQty(PCS)
AP280N08MPTO-247-3LAP280N08MPXXXYYYY450
AbsoluteMaximumRatings(T=25℃unlessotherwisenoted)
C
SymbolParameterRatingUnits
VDSDrain-SourceVoltage85V
VGSGate-SourceVoltage±20V
I@T=25℃ContinuousDrainCurrent,VGS@10V280A
DC
I@T=100℃ContinuousDrainCurrent,VGS@10V196A
DC
IDMPulsedDrainCurrent1240A
EASSinglePulseAvalancheEnergy1858mJ
P@T=25℃TotalPowerDissipation4347.5