AP120N07D
68VN-ChannelEnhancementModeMOSFET
Description
TheAP120N07Dusesadvancedtrenchtechnology
toprovideexcellentRDS(ON),lowgatechargeand
operationwithHightEAS.Thisdeviceissuitable
foruseasaBatteryprotectionorinotherSwitching
application.
GeneralFeatures
V=68VI120A
DSD
RDS(ON)6.5mΩ@VGS=10V(Type：5.7mΩ)
Application
Batteryprotection
Loadswitch
Uninterruptiblepowersupply
PackageMarkingandOrderingInformation
ProductIDPackMarkingQty(PCS)
AP120N07DTO-252-3LAP120N07DXXXYYYY2500
AbsoluteMaximumRatings(T=25℃unlessotherwisenoted)
C
SymbolParameterRatingUnits
VDSDrain-SourceVoltage68V
VGSGate-SourceVoltage±20V
I@T=25℃ContinuousDrainCurrent,VGS@10V1120A
DC
I@T=100℃ContinuousDrainCurrent,VGS@10V163A
DC
IDMPulsedDrainCurrent2400A
EASSinglePulseAvalancheEnergy3180mJ
IASAvalancheCurrent