AP400N08TIT2
80VN-ChannelEnhancementModeMOSFET
Description
TheAP400N08T/T2usesadvancedSGTIItechnology
toprovideexcellentRDS(ON),lowgatechargeand
operationwithgatevoltagesaslowas10V.
ThisdeviceissuitableforuseasaBatteryprotection
orinotherSwitchingapplication.
GeneralFeatures
V=80VI400A
DSD
RDS(ON)1.8mΩVGS=10V（Type：1.5mΩ）
Application
Batteryprotection
Loadswitch
Uninterruptiblepowersupply
PackageMarkingandOrderingInformation
ProductIDPackMarkingQty(PCS)
AP400N08TTO-263-3LAP400N08TXXXYYYY2000
AP400N08T2TO-262-3LAP400N08P2XXXYYYY1000
AbsoluteMaximumRatings(T=25℃unlessotherwisenoted)
C
SymbolParameterRatingUnits
VDSDrain-SourceVoltage80V
VGSGate-SourceVoltage±20V
I@T=25℃ContinuousDrainCurrent,VGS@10V400A
DC
I@T=100℃ContinuousDrainCurrent,VGS@10V253A
DC
IDMPulsedDrainCurrent1600A
EASSinglePulseAvalancheEnergy2258