AP300N08T6
85VN-ChannelEnhancementModeMOSFET
Description
TheAP300N08T6usesadvancedSGTIItechnology
toprovideexcellentRDS(ON),lowgatechargeand
operationwithgatevoltagesaslowas10V.
ThisdeviceissuitableforuseasaBatteryprotection
orinotherSwitchingapplication.
GeneralFeatures
V=85VI300A
DSD
RDS(ON)2.0mΩVGS=10V（Type：1.6mΩ）
Application
Batteryprotection
Loadswitch
Uninterruptiblepowersupply
PackageMarkingandOrderingInformation
ProductIDPackMarkingQty(PCS)
AP300N08T6TO-263-6LAP300N08T6XXXYYYY800
AbsoluteMaximumRatings(T=25℃unlessotherwisenoted)
C
SymbolParameterRatingUnits
VDSDrain-SourceVoltage85V
VGSGate-SourceVoltage±20V
I@T=25℃ContinuousDrainCurrent,VGS@10V300A
DC
I@T=100℃ContinuousDrainCurrent,VGS@10V196A
DC
IDMPulsedDrainCurrent1240A
EASSinglePulseAvalancheEnergy1858mJ
P@T=25℃TotalPowerDissipation4