AP200N15MP
150VN-ChannelEnhancementModeMOSFET
Description
TheAP200N15MPusesadvancedAPM-SGTⅠtechnology
toprovideexcellentRDS(ON),lowgatechargeand
operationwithgatevoltagesaslowas10V.This
deviceissuitableforuseasaBatteryprotection
orinotherSwitchingapplication.
GeneralFeatures
V=150VI200A
DSD
RDS(ON)7.2mΩ@VGS=10V(Type：6.2mΩ)
Application
DC/DCConverter
LEDBacklighting
PowerManagementSwitches
PackageMarkingandOrderingInformation
ProductIDPackMarkingQty(PCS)
AP200N15MPTO-247-3LAP200N15MPXXXYYYY300
AbsoluteMaximumRatings(T=25℃unlessotherwisenoted)
C
SymbolParameterRatingUnits
VDSDrain-SourceVoltage150V
VGSGate-SourceVoltage±20V
I@T=25℃ContinuousDrainCurrent,VGS@10V200A
DC
I@T=100℃ContinuousDrainCurrent,VGS@10V140A
DC
IDMPulsedDrainCurrent550A
EASSinglePulseAvalancheEnergy506mJ
IASAvalancheCurrent53.4