NSM2013

High-Accuracy,Hall-Effct-BasdCurrntSnsorICwith

Common-ModFildRjctionin5kVHigh-Isolation

Datasht(EN)1.0

ProductOvrviw?HighisolationlvlthatmtsULstandards

?Maximumrpatdisolationwithstandvoltag(VIROM):

NSM2013isanintgratdpathcurrntsnsorwithavry

1550Vpk

lowon-rsistancof0.85mΩ,rducinghatlossonthchip.

?Maximumworkingisolationwithstandvoltag(VIOWM):

NOVOSENSEinnovativisolationtchnologyandsignal1097Vrms

conditioningdsigncanmthighisolationlvlswhil?Withstandisolationvoltag(VISO):5000Vrms

snsingthcurrntflowingthroughthintrnalBusbar.A

?Maximumsurgisolationwithstandvoltag(VIOSM):

diffrntialHallpairisusdintrnally,soithasastrong10kV

immunitytoxtrnalstraymagnticfilds.

?Maximumsurgcurrnt(Isurg):13kA

NSM2013snssthmagnticfildgnratdbyth?CMTI100V/ns

Busbarcurrntflowingundrthchiptoindirctlydtct?CTI(I)

thcurrnt.Compardwiththcurrntsamplingmthod

?Crpagdistanc/Clarancdistanc:8mm

ofthShunt+isolatdop-amp,NSM2013liminatsth

?NOVOSENSEinnovativ‘SpinCurrnt’tchnology

ndforthprimarysidpowrsupplyandhasasimpl

maksoffsttmpraturdrif