NSM2011

High-Accuracy,Hall-Effect-BasedCurrentSensorICwith

Common-ModeFieldRejectionin5kVHigh-Isolation

Datasheet(EN)1.3

ProductOverview?Maximumworkingisolationwithstandvoltage(VIOWM):

1097Vrms

NSM2011isanintegratedpathcurrentsensorwithavery

?Withstandisolationvoltage(VISO):5000Vrms

lowon-resistanceof0.85mΩ,reducingheatlossonthechip.

?Maximumsurgeisolationwithstandvoltage(VIOSM):

NOVOSENSEinnovativeisolationtechnologyandsignal10kV

conditioningdesigncanmeethighisolationlevelswhile?Maximumsurgecurrent(Isurge):13kA

sensingthecurrentflowingthroughtheinternalBusbar.A

?CMTI100V/ns

differentialHallpairisusedinternally,soithasastrong

?CTI（I）

immunitytoexternalstraymagneticfields.

?Creepagedistance/Clearancedistance:8mm

NSM2011sensesthemagneticfieldgeneratedbytheBusbar

?AnexternalcapacitorontheFilterpincanreducenoise

currentflowingunderthechiptoindirectlydetectthe

(sacrifi