AP17N25D
250VN-ChannelEnhancementModeMOSFET
Description
TheAP17N25DissiliconN-channelEnhanced
VDMOSFETs,isobtainedbytheself-alignedplanarTechnology
whichreducetheconductionloss,improveswitching
performanceandenhancetheavalancheenergy.Thetransistor
canbeusedinvariouspowerswitchingcircuitforsystem
miniaturizationandhigherefficiency.
GeneralFeatures
V=250VI17A
DSD
RDS(ON)280mΩ@VGS=10V（Type：220mΩ）
Application
UninterruptiblePowerSupply(UPS)
PowerFactorCorrection(PFC)
PackageMarkingandOrderingInformation
ProductIDPackMarkingQty(PCS)
AP17N25DTO-252-3LAP17N25DXXXYYYY2500
AbsoluteMaximumRatings(T=25℃unlessotherwisenoted)
C
SymbolParameterValueUnit
VDSSDrain-SourceVoltage(VGS=0V)250V
ID@TA=25℃ContinuousDrainCurrent,VGS@10V17A
ID@TA=70℃ContinuousDrainCurrent,VGS@10V13A
IDMPulsedDrainCurrent(note1)54A
VGSGate-SourceVoltage±20V
EASSinglePulseAvalancheEnergy(note2)360