AP20N65MP
650VN-ChannelEnhancementModeMOSFET
Description
TheAP20N65MPissiliconN-channelEnhanced
VDMOSFETs,isobtainedbytheself-alignedplanarTechnology
whichreducetheconductionloss,improveswitching
performanceandenhancetheavalancheenergy.Thetransistor
canbeusedinvariouspowerswitchingcircuitforsystem
miniaturizationandhigherefficiency.
GeneralFeatures
V=650VI=20A
DSD
RDS(ON)480mΩ@VGS=10V（Type：380mΩ）
Application
UninterruptiblePowerSupply(UPS)
PowerFactorCorrection(PFC)
PackageMarkingandOrderingInformation
ProductIDPackMarkingQty(PCS)
AP20N65MPTO-247-3LAP20N65MPXXXYYYY360
AbsoluteMaximumRatings(T=25℃unlessotherwisenoted)
C
SymbolParameterValueUnit
VDSSDrain-SourceVoltage(VGS=0V)650V
IDContinuousDrainCurrent20A
IDMPulsedDrainCurrent(note1)72A
VGSGate-SourceVoltage±30V
EASSinglePulseAvalancheEnergy(note2)340mJ
IARAvalancheCurrent(note1)18A
EAR