基本信息
文件名称:NSD2621A-DQAGR 半桥GaN驱动器 QFN 深圳恒锐丰科技.pdf
文件大小:1.1 MB
总页数:20 页
更新时间:2025-04-01
总字数:约6.31万字
文档摘要

NSD2621X

Half-bridgeGaNDriver

Datasheet(EN)1.2

ProductOverviewApplications

NSD2621Xisanintegratedhalf-bridgegatedriverwhich?DrivingGaNpowerFETusedinHalf-bridge,full-bridge,

isdesignedforGaNHEMT.activeflybackorforward,LLCDC-DCconverter

?PFCandAC-DCconverter

Thedriveroperateswithawidesupplyvoltagefrom10V

to18V,whileinternalregulatorcouldofferstabledriver?IndustrialInvertersandMotorDrives

voltagetokeepGaNFETsafe.

DeviceInformation

Theundervoltagelock-out(UVLO)protectionfeatureis

providedinlowsideandhighsidedriverstopreventthePartNumberOutputBodySize

GaNFETfromoperatinginlowefficiencyordangerousNSD2621A-DQAGR6V4.0mmx4.0mmx0.55mm

conditions

NSD2621C-DQAGR5V4.0mmx4.0mmx0.55mm

Theprogrammabledead-timecontrolfunctionhasbeen

provided.Theadjustabledead-timerangeisfrom20nsFunctionalBlockDiagram

to100ns.

Thedeviceoperatesintheindustrialte